RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-5
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Microsemi VRF151G technical specifications.
| Continuous Drain Current (ID) | 36A |
| Gate to Source Voltage (Vgs) | 40V |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Mount | Screw |
| RoHS Compliant | Yes |
| RoHS | Compliant |
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