Mitsubishi
FS10KM-12
Power Field-Effect Transistor, 10A I(D), 600V, 0.94ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Quick Jump:
Technical Specifications
Mitsubishi FS10KM-12 technical specifications.
General
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 600V |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Mitsubishi FS10KM-12 Datasheet
Download the complete datasheet for Mitsubishi FS10KM-12 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.