Power Field-Effect Transistor, 5A I(D), 800V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Mitsubishi FS5KM-16A technical specifications.
| Continuous Drain Current (ID) | 5A |
| Drain to Source Voltage (Vdss) | 800V |
| RoHS Compliant | No |
| RoHS | Not Compliant |
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