Mitsubishi
MGF0919A
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET, HERMETIC SEALED PACKAGE-2
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Technical Specifications
Mitsubishi MGF0919A technical specifications.
General
Max Operating Temperature
175
Number of Terminals
2
Terminal Position
DUAL
Pin Count
2
Number of Elements
1
Compliance
Eccn Code
EAR99
HTS Code
8541.29.00.75
REACH
unknown
Military Spec
False
Datasheet
Mitsubishi MGF0919A Datasheet
Download the complete datasheet for Mitsubishi MGF0919A to view detailed technical specifications.
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