RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, P-Channel, High Electron Mobility FET, GD-30, 4 PIN
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| Max Operating Temperature | 125 |
| Number of Terminals | 4 |
| Terminal Position | DUAL |
| Pin Count | 4 |
| Number of Elements | 1 |
| RoHS | Yes |
| HTS Code | 8541.21.00.75 |
| REACH | unknown |
| Military Spec | False |
