RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
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Mitsubishi RD06HVF1 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| RoHS | No |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | unknown |
| Military Spec | False |
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