Mitsubishi
RD07MVS2
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10
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Technical Specifications
Mitsubishi RD07MVS2 technical specifications.
General
Max Operating Temperature
125
Number of Terminals
3
Terminal Position
QUAD
Pin Count
10
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
Lead Free
Yes
REACH
unknown
Military Spec
False
Datasheet
Mitsubishi RD07MVS2 Datasheet
Download the complete datasheet for Mitsubishi RD07MVS2 to view detailed technical specifications.
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