Mitsubishi
RD12MVP1
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4
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Technical Specifications
Mitsubishi RD12MVP1 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Terminal Position | QUAD |
| Pin Count | 4 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Mitsubishi RD12MVP1 Datasheet
Download the complete datasheet for Mitsubishi RD12MVP1 to view detailed technical specifications.
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