Mitsubishi
RD30HUF1
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
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Technical Specifications
Mitsubishi RD30HUF1 technical specifications.
General
Max Operating Temperature
175
Number of Terminals
2
Terminal Position
DUAL
Number of Elements
1
Compliance
Eccn Code
EAR99
REACH
unknown
Military Spec
False
Datasheet
Mitsubishi RD30HUF1 Datasheet
Download the complete datasheet for Mitsubishi RD30HUF1 to view detailed technical specifications.
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