Mitsubishi
RD35HUF2
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-8
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-8
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Technical Specifications
Mitsubishi RD35HUF2 technical specifications.
General
| Number of Terminals | 8 |
| Terminal Position | DUAL |
| Pin Count | 8 |
| Number of Elements | 2 |
Compliance
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Mitsubishi RD35HUF2 Datasheet
Download the complete datasheet for Mitsubishi RD35HUF2 to view detailed technical specifications.
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