Small Signal Field-Effect Transistor, 0.08A I(D), 600V, 3-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, DIP-8
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Monolithic Power Systems LN60A01EP-LF technical specifications.
| Package/Case | DIP |
| Continuous Drain Current (ID) | 80mA |
| Drain to Source Voltage (Vdss) | 600V |
| FET Type | 3 N-Channel |
| Lead Free | Lead Free |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -20°C |
| Max Power Dissipation | 1.3W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Rds On Max | 190R |
| RoHS Compliant | Yes |
| RoHS | Compliant |
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