PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power1.3W
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Technical Specifications
Monolithic Power Systems LN60A01ES-LF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 80mA |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 190R |
| Drain to Source Voltage (Vdss) | 600V |
| FET Type | 3 N-Channel |
| Gate to Source Voltage (Vgs) | 15V |
| Lead Free | Lead Free |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -20°C |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Package Quantity | 100 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.3W |
| Rds On Max | 190R |
Compliance
| RoHS | Compliant |
Datasheet
Monolithic Power Systems LN60A01ES-LF Datasheet
Download the complete datasheet for Monolithic Power Systems LN60A01ES-LF to view detailed technical specifications.
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