The 2SC3153M is a single NPN bipolar junction transistor from Mospec Semiconductor. It features a maximum collector-emitter voltage of 800V and a maximum DC collector current of 6A. The device is constructed from silicon material and has a maximum power dissipation of 100mW. The 2SC3153M operates over a temperature range of -55°C to 150°C. It is categorized as a bipolar power transistor.
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Technical Specifications
Mospec Semiconductor 2SC3153M technical specifications.
General
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 900V |
| Maximum Emitter Base Voltage | 7V |
| Maximum Collector-Emitter Voltage | 800V |
| Maximum DC Collector Current | 6A |
| Maximum Power Dissipation | 100000mW |
| Material | Si |
| Minimum DC Current Gain | [email protected]@5V |
| Maximum Transition Frequency | 7(Min)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SJ642 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Mospec Semiconductor 2SC3153M Datasheet
Download the complete datasheet for Mospec Semiconductor 2SC3153M to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.