1N5822

This axial-leaded Schottky barrier rectifier is rated for 3.0 A average forward current and 40 V repetitive reverse voltage. It uses a large-area metal-to-silicon power diode structure with chrome barrier metal, epitaxial construction, oxide passivation, and metal overlap contact. The device is intended for low-voltage, high-frequency inverters, freewheeling, and polarity-protection functions. Maximum forward voltage for the 1N5822 is 0.39 V at 1.0 A, 0.525 V at 3.0 A, and 0.95 V at 9.4 A, with maximum reverse current of 2 mA at 25°C and 20 mA at 100°C at rated dc voltage. Operating and storage junction temperature range is -65°C to +125°C, and peak operating junction temperature is 150°C.