High-voltage silicon NPN transistor is rated for 250 V collector-emitter sustaining voltage and 1.0 A continuous collector current. The device dissipates up to 1.0 W at 25 °C ambient or 5.0 W at 25 °C case temperature with operation from -65 °C to 200 °C. It uses a TO-39 metal-can package and provides 40 to 160 DC current gain at 20 mA with 10 V collector-emitter voltage.
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| Transistor Polarity | NPN |
| Package / Case | TO-39 |
| Collector-Emitter Sustaining Voltage | 250V |
| Collector-Base Voltage | 300V |
| Emitter-Base Voltage | 7.0V |
| Continuous Collector Current | 1.0A |
| Total Device Dissipation at 25°C Ambient | 1.0W |
| Ambient Derating Above 25°C | 5.7mW/°C |
| Total Device Dissipation at 25°C Case | 5.0W |
| Case Derating Above 25°C | 28.6mW/°C |
| Operating Junction Temperature Range | -65 to 200°C |
| Thermal Resistance Junction-to-Case | 35°C/W |
| Thermal Resistance Junction-to-Ambient | 175°C/W |
| DC Current Gain | 40 to 160 at IC=20 mA, VCE=10 V |
| Collector-Emitter Saturation Voltage | 0.5 max at IC=50 mA, IB=4 mAV |
| Base-Emitter Saturation Voltage | 1.3 maxV |
| Current-Gain Bandwidth Product | 15 min at IC=10 mA, VCE=10 VMHz |
| Output Capacitance | 10 max at VCB=10 V, f=1 MHzpF |
| Input Capacitance | 75 max at VEB=5 V, f=1 MHzpF |
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