This device is an NPN silicon small-signal switching transistor qualified to MIL-PRF-19500/255. It is rated for 50 V collector-emitter breakdown voltage, 75 V collector-base voltage, 6.0 V emitter-base voltage, and 800 mA continuous collector current. Power dissipation is specified as 500 mW at 25°C ambient or 1.0 W at 25°C case, with an operating and storage junction temperature range of -65°C to +200°C. The transistor is supplied in a TO-18 metal can package with emitter, base, and collector leads. Electrical characteristics include DC current gain up to 325 at low current test conditions, input capacitance up to 25 pF, output capacitance up to 8.0 pF, 35 ns turn-on time, and 300 ns turn-off time.
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| Number of Terminals | 3 |
| Terminal Position | BOTTOM |
| Number of Elements | 1 |
| RoHS | No |
| Eccn Code | EAR99 |
| HTS Code | 8541.21.00.95 |
| REACH | unknown |
| Military Spec | False |
