Integrated Power Stage for 2.0 hp Motor Drives. This module integrates a 3-phase input rectifier bridge, 3-phase output inverter, brake transistor/diode, current sense resistor and temperature sensor in a single convenient package. The output inverter utilizes advanced insulated gate bipolar transistors (IGBT) matched with free-wheeling diodes to give optimal dynamic performance. It has been configured for use as a three-phase motor drive module or for many other power switching applications. The top connector pins have been designed for easy interfacing to the user's control board. Includes DC Bus Current Sense Resistor, Short Circuit Rated (10 µs @ 25°C, 300V), Temperature Sensor, Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms), and a Convenient Package Outline. This device is not recommended for new designs and is replaced by MHPM7A20E60DC3.
Quick Jump:
Technical Specifications
Motorola MHPM7A20A60A technical specifications.
General
| Peak Repetitive Reverse Voltage (TJ = 25°C) | 600V |
| Average Output Rectified Current | 20A |
| Peak Non-repetitive Surge Current (1/2 cycle) | 240A |
| IGBT Reverse Voltage | 600V |
| Gate-Emitter Voltage | ± 20V |
| Continuous IGBT Collector Current | 20A |
| Peak Repetitive IGBT Collector Current (PW = 1.0 ms) | 40A |
| Continuous Free-Wheeling Diode Current | 20A |
| Peak Repetitive Free-Wheeling Diode Current (PW = 1.0 ms) | 40A |
| IGBT Power Dissipation per die (TC = 95°C) | 78W |
| Free-Wheeling Diode Power Dissipation per die (TC = 95°C) | 39W |
| Junction Temperature Range | -40 to +125°C |
| Short Circuit Duration (VCE = 300V, TJ = 25°C) | 10µs |
| Brake Circuit IGBT Reverse Voltage | 600V |
| Brake Circuit Gate-Emitter Voltage | ± 20V |
| Brake Circuit Continuous IGBT Collector Current | 20A |
| Brake Circuit Peak Repetitive IGBT Collector Current | 40A |
| Brake Circuit IGBT Power Dissipation (TC = 95°C) | 78W |
| Brake Circuit Peak Repetitive Output Diode Reverse Voltage (TJ = 125°C) | 600V |
| Brake Circuit Continuous Output Diode Current | 20A |
| Brake Circuit Peak Output Diode Current | 40A |
| Isolation Voltage (47-63 Hz, 1.0 Minute Duration) | 2500Vac |
| Operating Case Temperature Range | -40 to +90°C |
| Storage Temperature Range | -40 to +125°C |
| Mounting Torque | 6.0lb-in |
| Input Rectifier Reverse Leakage Current (VRRM = 600 V) | 50µA |
| Input Rectifier Forward Voltage (IF = 20 A) | 1.5V |
| Input Rectifier Thermal Resistance (Each Die) | 2.9°C/W |
| Output Inverter Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V) | ± 20µA |
| Output Inverter Collector-Emitter Leakage Current (VCE = 600 V, VGE = 0 V) @ TJ = 25°C | 100µA |
| Output Inverter Collector-Emitter Leakage Current (VCE = 600 V, VGE = 0 V) @ TJ = 125°C | 2000µA |
| Output Inverter Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) | 4.0 to 8.0V |
| Output Inverter Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0) | 600V |
| Output Inverter Collector-Emitter Saturation Voltage (IC = 20 A, VGE = 15 V) | 2.5 to 3.5V |
| Output Inverter Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz) | 4400pF |
| Output Inverter Input Gate Charge (VCE = 300 V, IC = 20 A, VGE = 15 V) | 145nC |
| Output Inverter Fall Time - Inductive Load (VCE = 300 V, IC = 20 A, VGE = 15 V, RG(off) = 20 Ω) | 210 to 500ns |
| Output Inverter Turn-On Energy (VCE = 300 V, IC = 20 A, VGE = 15 V, RG(on) = 47 Ω) | 2.5mJ |
| Output Inverter Turn-Off Energy (VCE = 300 V, IC = 20 A, VGE = 15 V, RG(off) = 20 Ω) | 2.5mJ |
| Output Inverter Free Wheeling Diode Forward Voltage (IF = 20 A, VGE = 0 V) | 1.3 to 2.0V |
| Output Inverter Free Wheeling Diode Reverse Recovery Time (IF = 20 A, V = 300 V, di/dt = 100 A/µs) | 170 to 200ns |
| Output Inverter Free Wheeling Diode Stored Charge (IF = 20 A, V = 300 V, di/dt = 100 A/µs) | 1060 to 1600nC |
| Output Inverter Thermal Resistance - IGBT (Each Die) | 1.5°C/W |
| Output Inverter Thermal Resistance - Free-Wheeling Diode (Each Die) | 2.9°C/W |
| Brake Circuit Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V) | ± 20µA |
| Brake Circuit Collector-Emitter Leakage Current (VCE = 600 V, VGE = 0 V) @ TJ = 25°C | 100µA |
| Brake Circuit Collector-Emitter Leakage Current (VCE = 600 V, VGE = 0 V) @ TJ = 125°C | 2000µA |
| Brake Circuit Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) | 4.0 to 8.0V |
| Brake Circuit Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0) | 600V |
| Brake Circuit Collector-Emitter Saturation Voltage (VGE = 15 V, IC = 20 A) | 2.5 to 3.5V |
| Brake Circuit Input Capacitance (VGE = 0 V, VCE = 25 V, f = 1.0 MHz) | 4400pF |
| Brake Circuit Input Gate Charge (VCE = 300 V, IC = 20 A, VGE = 15 V) | 145nC |
| Brake Circuit Fall Time - Inductive Load (VCE = 300 V, IC = 20 A, VGE = 15 V, RG(off) = 20 Ω) | 210 to 500ns |
| Brake Circuit Turn-On Energy (VCE = 300 V, IC = 20 A, VGE = 15 V, RG(on) = 47 Ω) | 2.5mJ |
| Brake Circuit Turn-Off Energy (VCE = 300 V, IC = 20 A, VGE = 15 V, RG(off) = 20 Ω) | 2.5mJ |
| Brake Circuit Output Diode Forward Voltage (IF = 20 A) | 1.3 to 2.0V |
| Brake Circuit Output Diode Reverse Leakage Current | 50µA |
| Brake Circuit Thermal Resistance - IGBT | 1.5°C/W |
| Brake Circuit Thermal Resistance - Output Diode | 2.9°C/W |
| Sense Resistor Resistance | 5.0mΩ |
| Sense Resistor Resistance Tolerance | -1.0 to +1.0% |
| Temperature Sense Diode Forward Voltage (@ IF = 1.0 mA) | 0.660V |
| Temperature Sense Diode Forward Voltage Temperature Coefficient (@ IF = 1.0 mA) | -1.95mV/°C |
Compliance
| Certification | UL Recognized |
Datasheet
Motorola MHPM7A20A60A Datasheet
Download the complete datasheet for Motorola MHPM7A20A60A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.