This PNP silicon high-voltage transistor is intended for low-power amplification and switching applications. It is housed in a SOT-23 surface-mount package and is rated for up to 150 V collector-emitter voltage and 600 mA collector current. Power dissipation is specified as 310 mW on a minimum pad layout or 350 mW on a 15 mm × 15 mm copper area. The operating and storage temperature range spans -55 °C to +150 °C.
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Motorola MMBT5401 technical specifications.
| Max Operating Temperature | 150 |
| RoHS | No |
| REACH | unknown |
| Military Spec | False |
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