This device is a silicon NPN high-voltage transistor in a TO-92 (TO-226AA) through-hole package. It is rated for 300 V collector-emitter voltage, 300 V collector-base voltage, 6.0 V emitter-base voltage, and 500 mA continuous collector current. Total device dissipation is 625 mW at 25°C ambient, and the operating and storage junction temperature range is -55°C to +150°C. The datasheet also specifies DC current gain of 25 minimum at 1 mA and 40 minimum at 10 mA and 30 mA, with a typical small-signal bandwidth product rating of 50 MHz.
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| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | TO-92 |
| Number of Elements | 1 |
| Eccn Code | EAR99 |
| HTS Code | 8541.21.00.95 |
| REACH | unknown |
| Military Spec | False |
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