Ultra High Frequency Band RF Power Field-Effect Transistor, N-Channel, Silicon, Metal-oxide Semiconductor FET. Features a 2-element design with 4 terminals in a DUAL configuration. Maximum operating temperature reaches 200°C. Encased in CASE 375-04.
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| Max Operating Temperature | 200 |
| Number of Terminals | 4 |
| Terminal Position | DUAL |
| Number of Elements | 2 |
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
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