High-power NPN silicon bipolar junction transistor designed for demanding applications. Features a 20A continuous collector current and a 40V collector-emitter voltage rating. This single-element transistor utilizes a 4-terminal radial package for efficient heat dissipation and robust mounting.
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| Number of Terminals | 4 |
| Terminal Position | RADIAL |
| Number of Elements | 1 |
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
