Darlington complementary silicon power transistor designed for general-purpose amplifier and low-frequency switching applications. This PNP device in the TIP145/TIP146/TIP147 family is rated for 10 A collector current, 100 V minimum collector-emitter sustaining voltage, and 125 W power dissipation. The monolithic structure includes a built-in base-emitter shunt resistor and provides high DC current gain of at least 1000 at 5 A and at least 500 at 10 A. Operating and storage junction temperature range is -65 to +150 °C.
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| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-218 |
| Number of Elements | 1 |
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
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