Multicomp
2N5551
MULTICOMP 2N5551 Bipolar (BJT) Single Transistor, NPN, 160 V, 300 MHz, 625 mW, 600 mA, 80
PackageTO-92
PolarityNPN
Power625mW
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Technical Specifications
Multicomp 2N5551 technical specifications.
General
Package/Case
TO-92
Collector Emitter Breakdown Voltage
160V
Collector Emitter Voltage (VCEO)
180V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Polarity
NPN
Power Dissipation
625mW
Reach SVHC Compliant
No
Transition Frequency
300MHz
Compliance
RoHS
Compliant
Datasheet
Multicomp 2N5551 Datasheet
Download the complete datasheet for Multicomp 2N5551 to view detailed technical specifications.
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