The 2N6052 is a PNP transistor with a collector-emitter breakdown voltage of 100V and a collector-emitter voltage of 2V. It has a minimum current gain of 750 and a maximum collector current of 12A. The transistor can handle a maximum power dissipation of 150W and operates within a temperature range of -65°C to 200°C. It is available in a TO-3 package with a through-hole termination.
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Multicomp 2N6052 technical specifications.
| Package/Case | TO-3 |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Voltage (VCEO) | 2V |
| hFE Min | 750 |
| Max Collector Current | 12A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 150W |
| Polarity | PNP |
| Power Dissipation | 150W |
| Reach SVHC Compliant | No |
| Termination | Through Hole |
| Transition Frequency | 4MHz |
| RoHS | Compliant |
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