N-channel enhancement-mode power MOSFET uses trench technology for low on-resistance and low gate charge. The device is rated for 100 V drain-source voltage, 130 A continuous drain current, and 285 W maximum power dissipation at 25 °C case temperature. Typical drain-source on-resistance is 5.3 mΩ at 10 V gate drive and 20 A drain current, with a 6.8 mΩ maximum limit. The TO-263-2L package supports surface-mount power switching, hard-switched and high-frequency circuits, and uninterruptible power supply applications. The operating junction and storage temperature range is -55 °C to 175 °C, and the datasheet identifies the product as Pb-free.
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| Transistor Type | N-channel enhancement-mode MOSFET |
| Drain-Source Voltage | 100V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 130A |
| Continuous Drain Current at 100°C | 92A |
| Pulsed Drain Current | 500A |
| Maximum Power Dissipation | 285W |
| Derating Factor | 1.9W/°C |
| Single Pulse Avalanche Energy | 1100mJ |
| Operating Junction and Storage Temperature Range | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 0.53°C/W |
| Drain-Source Breakdown Voltage | 100 min, 110 typV |
| Zero Gate Voltage Drain Current | 1 maxµA |
| Gate Threshold Voltage | 2 min, 3.0 typ, 4 maxV |
| Drain-Source On-State Resistance | 5.3 typ, 6.8 max at VGS=10 V, ID=20 AmΩ |
| Forward Transconductance | 40 minS |
| Input Capacitance | 7180 typpF |
| Output Capacitance | 2800 typpF |
| Reverse Transfer Capacitance | 695 typpF |
| Total Gate Charge | 105 typnC |
| Diode Forward Voltage | 0.85 typ, 1.2 maxV |
| Reverse Recovery Time | 65 typns |
| Pb Free | Yes |
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