This device is an N-channel enhancement-mode power MOSFET rated for 150 V drain-source voltage and 20 A continuous drain current at 25 °C. It is specified with a maximum drain-source on-resistance of 85 mΩ at 10 V gate drive, with a typical value of 70 mΩ, and a typical total gate charge of 18 nC. The datasheet lists a TO-252-2L package, 75 W maximum power dissipation, 200 mJ single-pulse avalanche energy, and a junction and storage temperature range of -55 °C to 175 °C. The document also marks the part as a Pb-free product and identifies boost converters, LED backlighting, and uninterruptible power supplies as target applications.
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NCE Power NCE1520KA technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 150V |
| Continuous Drain Current | 20A |
| Continuous Drain Current at 100°C | 14A |
| Pulsed Drain Current | 40A |
| Gate-Source Voltage | ±20V |
| Power Dissipation | 75W |
| Single Pulse Avalanche Energy | 200mJ |
| Junction and Storage Temperature Range | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 2.0°C/W |
| Gate Threshold Voltage | 1.2 to 2.5V |
| Drain-Source On-Resistance | 70 typ, 85 maxmΩ |
| Input Capacitance | 2500pF |
| Total Gate Charge | 18nC |
| Reverse Recovery Time | 32ns |
| Pb Free | Yes |
