This device is an N-channel enhancement-mode power MOSFET built with trench technology for low on-resistance and low gate charge. It is rated for 30 V drain-source voltage, 65 A continuous drain current at 25 °C, and 65 W power dissipation in a DFN 5x6-8L package. Typical on-resistance is 5.7 mΩ at 10 V gate drive and 7.7 mΩ at 4.5 V, and the operating junction and storage range is -55 °C to 150 °C. It is intended for DC/DC converters, high-frequency switching, and synchronous rectification.
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NCE Power NCE3065G technical specifications.
| Transistor Type | N-Channel Enhancement Mode Power MOSFET |
| Drain-Source Voltage | 30V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 65A |
| Continuous Drain Current at 100 °C | 46A |
| Pulsed Drain Current | 200A |
| Power Dissipation | 65W |
| Derating Factor | 0.52W/°C |
| Single Pulse Avalanche Energy | 150mJ |
| Operating Junction and Storage Temperature Range | -55 to 150°C |
| Thermal Resistance Junction-to-Case | 1.92°C/W |
| Gate Threshold Voltage | 1.0 to 2.5V |
| Drain-Source On-Resistance at VGS=10V | 5.7 typ, 7.0 maxmΩ |
| Drain-Source On-Resistance at VGS=4.5V | 7.7 typ, 9.5 maxmΩ |
| Forward Transconductance | 20 minS |
| Input Capacitance | 1400 typpF |
| Output Capacitance | 205 typpF |
| Reverse Transfer Capacitance | 177 typpF |
| Turn-On Delay Time | 9 typns |
| Turn-On Rise Time | 8 typns |
| Turn-Off Delay Time | 28 typns |
| Turn-Off Fall Time | 5 typns |
| Total Gate Charge | 32.3 typnC |
| Gate-Source Charge | 4.9 typnC |
| Gate-Drain Charge | 6.9 typnC |
| Diode Forward Voltage | 0.85 typ, 1.2 maxV |
| Diode Forward Current | 65A |
| Reverse Recovery Time | 27 maxns |
| Reverse Recovery Charge | 20 maxnC |
| Pb-free Lead Plating | Yes |
