This device is an N-channel enhancement-mode power MOSFET built with trench technology for low on-resistance and low gate charge. It is rated for 30 V drain-source voltage and 90 A continuous drain current at 25°C, with typical RDS(on) of 3.4 mΩ at 10 V gate drive and 6.9 mΩ at 4.5 V. The part is supplied in a TO-252-2L package and is specified for junction temperatures from -55°C to 175°C. It is intended for DC/DC converters and synchronous rectifier applications.
Checking distributor stock and pricing after the page loads.
NCE Power NCE3090K technical specifications.
| Drain-Source Voltage | 30V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 90A |
| Continuous Drain Current @ 100°C | 63.6A |
| Pulsed Drain Current | 200A |
| Power Dissipation | 105W |
| Single Pulse Avalanche Energy | 380mJ |
| Operating Junction Temperature Range | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 1.43°C/W |
| Drain-Source On-Resistance @ VGS=10V | 3.4 typmΩ |
| Drain-Source On-Resistance @ VGS=4.5V | 6.9 typmΩ |
| Gate Threshold Voltage | 1 to 2.5V |
| Forward Transconductance | 20S |
| Input Capacitance | 3568pF |
| Output Capacitance | 422pF |
| Reverse Transfer Capacitance | 341pF |
| Total Gate Charge | 67nC |
| Reverse Recovery Time | 29ns |
