This device is a 30 V N-channel enhancement-mode power MOSFET built with advanced trench technology for low on-resistance and low gate charge. It is rated for 95 A continuous drain current at 25 °C, 300 A pulsed drain current, and 80 W maximum power dissipation. The part is supplied in a DFN 5x6-8L package and is intended for DC/DC converters, high-frequency switching, and synchronous rectification. It supports junction temperatures up to 150 °C and uses Pb-free lead plating.
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NCE Power NCE3095G technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 30V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 95A |
| Continuous Drain Current @ 100°C | 63.6A |
| Pulsed Drain Current | 300A |
| Power Dissipation | 80W |
| Single Pulse Avalanche Energy | 150mJ |
| Operating Junction Temperature | -55 to 150°C |
| Thermal Resistance Junction-to-Case | 1.56°C/W |
| Gate Threshold Voltage | 1.5 typV |
| Drain-Source On-Resistance @ VGS=10V | 3.5 typmΩ |
| Drain-Source On-Resistance @ VGS=4.5V | 5.3 typmΩ |
| Forward Transconductance | 30S |
| Input Capacitance | 1784pF |
| Output Capacitance | 266pF |
| Reverse Transfer Capacitance | 212pF |
| Turn-On Delay Time | 7ns |
| Turn-On Rise Time | 6ns |
| Turn-Off Delay Time | 30ns |
| Turn-Off Fall Time | 8ns |
| Total Gate Charge | 38.4nC |
| Gate-Source Charge | 5.8nC |
| Gate-Drain Charge | 7.9nC |
| Diode Forward Voltage | 0.85 typV |
| Reverse Recovery Time | 47ns |
| Reverse Recovery Charge | 25nC |
