This N-channel SJ-IV NF power MOSFET is rated for 600 V drain-source voltage and 29 A continuous drain current in a TO-220F package. Typical on-resistance is 98 mΩ at a 10 V gate drive, with 41.2 nC total gate charge, 2161 pF input capacitance, and 34.5 W power dissipation. The body diode is optimized for fast recovery to reduce reverse-recovery loss in bridge topologies such as LLC converters. The manufacturer lists it as an industrial production device.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the NCE Power NCE60NF110F datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
NCE Power NCE60NF110F technical specifications.
| Grade | Industrial |
| Technology | SJ-IV NF |
| Polarity | N |
| Drain-Source Voltage | 600V |
| Continuous Drain Current | 29A |
| Gate Threshold Voltage | 4V |
| On-Resistance @ 10 V Typ | 98mΩ |
| Gate-Source Voltage | ±20V |
| Input Capacitance | 2161pF |
| Total Gate Charge | 41.2nC |
| Power Dissipation | 34.5W |
| Special Feature | Fast Recovery |
Download the complete datasheet for NCE Power NCE60NF110F to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
