N-channel enhancement-mode power MOSFET uses trench technology for low on-resistance and low gate charge. The device is rated for 82 V drain-source voltage and 110 A continuous drain current at 25 °C. Typical drain-source on-resistance is 5.9 mΩ at 10 V gate drive and 20 A drain current. The TO-263-2L package supports high heat dissipation with 0.75 °C/W junction-to-case thermal resistance. Operating junction and storage temperature range is -55 °C to 175 °C, and the device is specified as a Pb-free product.
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| FET Type | N-channel enhancement mode |
| Drain-Source Voltage | 82V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 110A |
| Continuous Drain Current at 100 °C | 81A |
| Pulsed Drain Current | 350A |
| Maximum Power Dissipation | 200W |
| Power Derating Factor | 1.33W/°C |
| Single Pulse Avalanche Energy | 950mJ |
| Operating Junction Temperature | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 0.75°C/W |
| Drain-Source Breakdown Voltage | 82 minV |
| Gate Threshold Voltage | 2 min, 3 typ, 4 maxV |
| Drain-Source On-Resistance | 5.9 typ, 7.0 max at VGS=10 V, ID=20 AmΩ |
| Forward Transconductance | 60 minS |
| Input Capacitance | 6400 typpF |
| Output Capacitance | 334 typpF |
| Reverse Transfer Capacitance | 318 typpF |
| Turn-On Delay Time | 21 typns |
| Rise Time | 39 typns |
| Turn-Off Delay Time | 70 typns |
| Fall Time | 24 typns |
| Total Gate Charge | 120 typnC |
| Gate-Source Charge | 25.4 typnC |
| Gate-Drain Charge | 39.4 typnC |
| Diode Forward Voltage | 1.2 maxV |
| Diode Forward Current | 110A |
| Reverse Recovery Time | 43 typns |
| Reverse Recovery Charge | 93 typnC |
| Lead-free | Pb Free Product |
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