This device is an N-channel enhancement-mode power MOSFET rated for 82 V drain-source voltage and 140 A continuous drain current at 25 °C case temperature. It is specified with 4.3 mΩ typical and 6.0 mΩ maximum on-resistance at 10 V gate drive and 20 A drain current. The transistor is housed in a TO-220-3L package and is rated for 220 W power dissipation, 1200 mJ single-pulse avalanche energy, and a junction temperature range of -55 °C to 175 °C. The datasheet describes it for power switching, hard-switched high-frequency circuits, and uninterruptible power supply applications.
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NCE Power NCE82H140 technical specifications.
| Drain-Source Voltage | 82V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 140A |
| Continuous Drain Current at 100°C | 99A |
| Pulsed Drain Current | 480A |
| Power Dissipation | 220W |
| Single Pulse Avalanche Energy | 1200mJ |
| Operating Junction Temperature Range | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 0.68°C/W |
| Gate Threshold Voltage | 2 to 4 (typ 3)V |
| Drain-Source On-Resistance | 4.3 typ, 6.0 max @ VGS=10V, ID=20AmΩ |
| Forward Transconductance | 65S |
| Input Capacitance | 7900pF |
| Output Capacitance | 445pF |
| Reverse Transfer Capacitance | 384pF |
| Turn-on Delay Time | 23ns |
| Rise Time | 42ns |
| Turn-off Delay Time | 75ns |
| Fall Time | 26ns |
| Lead Free | Pb Free Product |
