This N-channel enhancement-mode power MOSFET is rated for 82 V drain-source voltage and 140 A continuous drain current at 25°C case temperature. It uses trench technology to achieve 4.3 mΩ typical and 5.2 mΩ maximum on-resistance at 10 V gate drive, with 158 nC typical total gate charge. The device is supplied in a TO-263-2L package and supports up to 220 W power dissipation, 1500 mJ single-pulse avalanche energy, and a -55°C to 175°C junction and storage temperature range. Typical dynamic characteristics include 7900 pF input capacitance, 445 pF output capacitance, and 384 pF reverse transfer capacitance at the stated test conditions.
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NCE Power NCE82H140D technical specifications.
| Transistor Type | N-Channel Enhancement Mode Power MOSFET |
| Drain-Source Voltage | 82V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 140A |
| Continuous Drain Current at 100°C | 99A |
| Pulsed Drain Current | 480A |
| Power Dissipation | 220W |
| Derating Factor | 1.47W/°C |
| Single Pulse Avalanche Energy | 1500mJ |
| Operating Junction Temperature Range | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 0.68°C/W |
| Thermal Resistance Junction-to-Ambient | 60°C/W |
| Drain-Source Breakdown Voltage | 82V |
| Zero Gate Voltage Drain Current | 1 maxµA |
| Gate-Body Leakage Current | ±100 maxnA |
| Gate Threshold Voltage | 2.5 min, 3 typ, 3.8 maxV |
| Drain-Source On-State Resistance | 4.3 typ, 5.2 maxmΩ |
| Forward Transconductance | 65 minS |
| Input Capacitance | 7900 typpF |
| Output Capacitance | 445 typpF |
| Reverse Transfer Capacitance | 384 typpF |
| Turn-On Delay Time | 23 typns |
| Turn-On Rise Time | 42 typns |
| Turn-Off Delay Time | 75 typns |
| Turn-Off Fall Time | 26 typns |
| Total Gate Charge | 158 typnC |
| Gate-Source Charge | 32 typnC |
| Gate-Drain Charge | 51 typnC |
| Diode Forward Voltage | 1.2 maxV |
| Diode Forward Current | 140A |
| Reverse Recovery Time | 50 typns |
| Reverse Recovery Charge | 110 typnC |
