This device is an N-channel super trench power MOSFET rated for 100 V drain-source voltage and 129 A continuous drain current. It is supplied in a TO-263-2L package and is intended for high-frequency switching and synchronous rectification applications. The MOSFET has a maximum on-resistance of 5.0 mΩ at 10 V gate drive and a typical total gate charge of 84.7 nC. It supports operation from -55 °C to 175 °C, with 185 W maximum power dissipation and 1000 mJ single-pulse avalanche energy.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the NCE Power NCEP01T12D datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
NCE Power NCEP01T12D technical specifications.
| Channel Type | N-Channel |
| Technology | Super Trench |
| Drain-Source Voltage | 100V |
| Continuous Drain Current | 129A |
| Continuous Drain Current at 100°C | 92A |
| Pulsed Drain Current | 480A |
| Gate-Source Voltage | ±20V |
| Power Dissipation | 185W |
| Single Pulse Avalanche Energy | 1000mJ |
| Gate Threshold Voltage | 2.5 to 4.5V |
| Drain-Source On-Resistance | 5.0 max @ VGS=10VmΩ |
| Forward Transconductance | 60S |
| Input Capacitance | 5600 typpF |
| Output Capacitance | 641 typpF |
| Reverse Transfer Capacitance | 28 typpF |
| Turn-On Delay Time | 16 typns |
| Rise Time | 67 typns |
| Turn-Off Delay Time | 45 typns |
| Fall Time | 14 typns |
| Total Gate Charge | 84.7 typnC |
| Reverse Recovery Time | 60 typns |
| Operating Junction Temperature Range | -55 to 175°C |
Download the complete datasheet for NCE Power NCEP01T12D to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
