This N-channel power MOSFET is rated for 100 V drain-to-source voltage and 125 A continuous drain current. It is housed in a TO-220-3 package and has a maximum power dissipation of 200 W. The device specifies 4.5 mΩ RDS(on) at 10 V gate drive, 92 nC gate charge at 10 V, and 5.5 nF input capacitance. Operating temperature range is -55°C to +175°C, and the part is listed as RoHS compliant.
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NCE Power NCEP045N10 technical specifications.
| Transistor Type | N-Channel |
| Drain to Source Voltage | 100V |
| Continuous Drain Current | 125A |
| Gate Threshold Voltage | 4V |
| Power Dissipation | 200W |
| RDS(on) | 4.5 @ 10VmΩ |
| Gate Charge | 92 @ 10VnC |
| Output Capacitance | 590pF |
| Reverse Transfer Capacitance | 25pF |
| Input Capacitance | 5.5nF |
| Operating Temperature | -55 to +175°C |
| RoHS | Compliant |
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