This device is an N-channel power MOSFET rated for 100 V drain-to-source voltage and 125 A continuous drain current. It specifies 4.5 mΩ on-resistance at 10 V gate drive and 200 W power dissipation. Gate threshold voltage is 4 V, total gate charge is 92 nC at 10 V, and capacitances include 5.5 nF input, 590 pF output, and 25 pF reverse transfer. Operating temperature range is -55 °C to +175 °C.
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NCE Power NCEP045N10M technical specifications.
| Drain to Source Voltage | 100V |
| Continuous Drain Current | 125A |
| Gate Threshold Voltage | 4V |
| Power Dissipation | 200W |
| RDS(on) | 4.5 @ 10VmΩ |
| Gate Charge (Qg) | 92 @ 10VnC |
| Output Capacitance (Coss) | 590pF |
| Reverse Transfer Capacitance (Crss) | 25pF |
| Input Capacitance (Ciss) | 5.5nF |
| Operating Temperature | -55 to 175°C |
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