This N-channel Super Trench II power MOSFET is rated for 85 V drain-source voltage and 120 A continuous drain current in a TO-220 package. It delivers 4.45 mΩ typical on-resistance and 71 nC typical total gate charge at 10 V gate drive, supporting efficient high-frequency switching and synchronous rectification. Maximum power dissipation is 150 W, with a junction operating range of -55 °C to 175 °C and 1.0 °C/W junction-to-case thermal resistance. The device is specified for DC/DC converters and uses Pb-free lead plating.
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NCE Power NCEP048N85M technical specifications.
| Channel Type | N-Channel |
| Technology | Super Trench II |
| Drain-Source Voltage | 85V |
| Continuous Drain Current | 120A |
| Continuous Drain Current @ 100°C | 92A |
| Pulsed Drain Current | 480A |
| Gate-Source Voltage | ±20V |
| Power Dissipation | 150W |
| Single Pulse Avalanche Energy | 660mJ |
| Operating Junction Temperature Range | -55 to 175°C |
| Gate Threshold Voltage | 2.0 to 4.0V |
| Drain-Source On-Resistance @ VGS=10V (typ) | 4.45mΩ |
| Drain-Source On-Resistance @ VGS=10V (max) | 4.8mΩ |
| Input Capacitance | 3780pF |
| Output Capacitance | 740pF |
| Reverse Transfer Capacitance | 30pF |
| Total Gate Charge | 71nC |
| Gate-Source Charge | 21nC |
| Gate-Drain Charge | 22nC |
| Thermal Resistance Junction-to-Case | 1.0°C/W |
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