This N-channel power MOSFET uses Super Trench II technology for high-frequency switching and synchronous rectification. It is rated for 100 V drain-source voltage, 110 A continuous drain current at 25 °C, and 150 W maximum power dissipation. The device specifies 5.2 mΩ typical on-resistance at 10 V gate drive and 72 nC typical total gate charge. It operates over a junction temperature range of -55 °C to 175 °C and is offered in a TO-262-3L package with Pb-free lead plating.
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NCE Power NCEP055N10U technical specifications.
| Transistor type | N-Channel Power MOSFET |
| Drain-Source Voltage | 100V |
| Continuous Drain Current | 110A |
| Continuous Drain Current at 100°C | 72A |
| Pulsed Drain Current | 440A |
| Maximum Power Dissipation | 150W |
| Drain-Source On-Resistance | 5.2 typ, 5.7 maxmΩ |
| Gate Threshold Voltage | 2.0 min, 3.0 typ, 4.0 maxV |
| Gate-Source Voltage | ±20V |
| Total Gate Charge | 72 typnC |
| Gate-Source Charge | 21 typnC |
| Gate-Drain Charge | 22 typnC |
| Input Capacitance | 3850 typpF |
| Output Capacitance | 410 typpF |
| Reverse Transfer Capacitance | 20 typpF |
| Single Pulse Avalanche Energy | 680mJ |
| Thermal Resistance Junction-to-Case | 1.0°C/W |
| Operating Junction Temperature Range | -55 to 175°C |
| Package | TO-262-3L |
| Lead Finish | Pb-free lead plating |
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