This N-channel super trench power MOSFET is rated for 60 V drain-source voltage and 90 A continuous drain current. It is offered in a TO-220-3L package with a maximum RDS(on) of 6.9 mΩ at VGS = 10 V and a typical total gate charge of 26.9 nC. The device supports pulsed drain current up to 360 A, power dissipation up to 100 W, and operation from -55 °C to 175 °C. It is intended for DC/DC converters, high-frequency switching, and synchronous rectification.
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NCE Power NCEP6090 technical specifications.
| Channel Type | N-Channel |
| Technology | Super Trench |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 90A |
| Continuous Drain Current @ TC=100°C | 63.6A |
| Pulsed Drain Current | 360A |
| Gate-Source Voltage | ±20V |
| Power Dissipation | 100W |
| Single Pulse Avalanche Energy | 320mJ |
| Operating Junction and Storage Temperature Range | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 1.50°C/W |
| Gate Threshold Voltage | 2 to 4V |
| Drain-Source On-State Resistance @ VGS=10V, ID=45A | 6.9 maxmΩ |
| Input Capacitance | 1700pF |
| Output Capacitance | 345pF |
| Reverse Transfer Capacitance | 8pF |
| Total Gate Charge | 26.9nC |
| Turn-On Delay Time | 8ns |
| Turn-Off Delay Time | 29ns |
| Reverse Recovery Time | 38ns |
| RoHS | Yes |
| Lead Free | Pb-free lead plating |
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