RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET, 79A, 4 PIN
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NEC NE6510179A-T1 technical specifications.
| Number of Terminals | 4 |
| Terminal Position | QUAD |
| Number of Elements | 1 |
| RoHS | No |
| REACH | Compliant |
| Military Spec | False |
No datasheet is available for this part.
