The 1N4990 is a unidirectional silicon zener diode with a maximum operating temperature of 175°C. It has a power dissipation of 5W and is packaged in an axial configuration. The diode element is made of silicon and is a single element device. It is suitable for use in a variety of applications where a zener diode is required. The 1N4990 is a discrete semiconductor component.
PolarityUNIDIRECTIONAL
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Technical Specifications
New Jersey Semiconductor 1N4990 technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Min Operating Temperature | -65 |
| Terminal Position | AXIAL |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | ZENER DIODE |
| Power Dissipation-Max | 5 |
Compliance
| REACH | unknown |
| Military Spec | False |
Datasheet
New Jersey Semiconductor 1N4990 Datasheet
Download the complete datasheet for New Jersey Semiconductor 1N4990 to view detailed technical specifications.
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