The 1N5309 is a silicon current regulator diode with a maximum power dissipation of 0.6W. It is available in a DO-35 package with an axial terminal position. The diode operates within a temperature range of -65 to 200°C. The 1N5309 is a single-element device made from silicon.
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| Max Operating Temperature | 200 |
| Number of Terminals | 2 |
| Min Operating Temperature | -65 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-35 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | CURRENT REGULATOR DIODE |
| Power Dissipation-Max | 0.6 |
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
