The 1N5313 is a silicon current regulator diode with a maximum power dissipation of 0.6W. It has a JEDEC package code of DO-35 and a terminal position of axial. The diode element is made of silicon and has a maximum operating temperature of 200C and a minimum operating temperature of -65C.
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Technical Specifications
New Jersey Semiconductor 1N5313 technical specifications.
General
| Max Operating Temperature | 200 |
| Number of Terminals | 2 |
| Min Operating Temperature | -65 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-35 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | CURRENT REGULATOR DIODE |
| Power Dissipation-Max | 0.6 |
Compliance
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
Datasheet
New Jersey Semiconductor 1N5313 Datasheet
Download the complete datasheet for New Jersey Semiconductor 1N5313 to view detailed technical specifications.
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