This device is a single Schottky rectifier diode in the 1N5822 family. The manufacturer product page lists a maximum continuous forward current of 3 A and a peak reverse repetitive voltage of 40 V. It is specified for operation from -65 °C to 150 °C, with an operating junction temperature range of -65 to 150 °C. The same page lists 80 A peak non-repetitive surge current, 2000 µA peak reverse current, and a peak forward voltage of 0.95 V at 9.4 A.
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| Max Operating Temperature | 150 |
| Min Operating Temperature | -65 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 40 |
| RoHS | No |
| REACH | unknown |
| Military Spec | False |
Download the complete datasheet for New Jersey Semiconductor 1N5822 to view detailed technical specifications.
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