The 1N6635 is a silicon zener diode with a maximum operating temperature of 175°C and a maximum power dissipation of 5W. It has a unidirectional polarity and is packaged in an axial configuration. The diode element is made of silicon and is a single zener diode. It is suitable for use in a variety of applications where a reliable and high-performance zener diode is required.
PolarityUNIDIRECTIONAL
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Technical Specifications
New Jersey Semiconductor 1N6635 technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Min Operating Temperature | -65 |
| Terminal Position | AXIAL |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | ZENER DIODE |
| Power Dissipation-Max | 5 |
Compliance
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | False |
Datasheet
New Jersey Semiconductor 1N6635 Datasheet
Download the complete datasheet for New Jersey Semiconductor 1N6635 to view detailed technical specifications.
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