This device is a complementary silicon PNP power transistor intended for general-purpose amplifier and switching applications. It is rated for a minimum 100 V collector-emitter sustaining voltage, 3 A continuous collector current, and 5 A peak collector current. The transistor is housed in a compact TO-220AB package and supports up to 40 W total power dissipation at a case temperature of 25°C. The datasheet specifies a minimum transition frequency of 3.0 MHz at 500 mA and DC current gain of at least 25 at 1 A. Operating and storage junction temperature range is specified from -65°C to +150°C.
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| Number of Elements | 1 |
| REACH | unknown |
| Military Spec | False |
Download the complete datasheet for New Jersey Semiconductor TIP32C to view detailed technical specifications.
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