NPN bipolar power transistor for general-purpose switching and amplification. It is rated for 100 V collector-emitter voltage, 25 A maximum DC collector current, and 125 W maximum power dissipation. The device is supplied in a TO-247 package and tube packaging. New Jersey Semiconductor lists a minimum transition frequency of 3 MHz and a maximum operating temperature of 150 °C. Maximum emitter-base voltage is 5 V, and the listed collector-emitter saturation voltage limits are 1.8 V at 1.5 A and 15 A, and 4 V at 5 A and 25 A.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the New Jersey Semiconductor TIP35C datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
New Jersey Semiconductor TIP35C technical specifications.
| Transistor Type | NPN |
| Configuration | Single |
| Collector-Emitter Voltage (VCEO) | 100V |
| Collector-Base Voltage (VCBO) | 100V |
| Emitter-Base Voltage (VEBO) | 5V |
| DC Collector Current | 25A |
| Power Dissipation | 125W |
| Transition Frequency | 3 minMHz |
| Operating Temperature | 150 max°C |
| Collector-Emitter Saturation Voltage | 1.8 max @ IC=15A, IB=1.5AV |
| Collector-Emitter Saturation Voltage | 4 max @ IC=25A, IB=5AV |
| REACH | unknown |
| Military Spec | False |
Download the complete datasheet for New Jersey Semiconductor TIP35C to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
