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| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| Pin Count | 2 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 40 |
| Min Ambient Temperature (Tamb) | -65°C |
| Max Ambient Temperature (Tamb) | 150°C |
| Min Storage Temperature (Tstg) | -65°C |
| Max Storage Temperature (Tstg) | 150°C |
| Max Thermal Resistance Junction to Ambient (Rth(j-a)) | 450K/W |
| Max Forward Voltage (VF) @ IF=1mA, Tamb=25°C | 380mV |
| Max Forward Voltage (VF) @ IF=10mA, Tamb=25°C | 500mV |
| Max Forward Voltage (VF) @ IF=40mA, Tamb=25°C | 1V |
| Typ Reverse Current (IR) @ VR=30V, Tamb=25°C | 1µA |
| Typ Reverse Current (IR) @ VR=40V, Tamb=25°C | 10µA |
| Typ Diode Capacitance (Cd) @ VR=0V, f=1MHz, Tamb=25°C | 5pF |
| Feature | High switching speed |
| Feature | Low leakage current |
| Feature | High breakdown voltage |
| Feature | Low capacitance |
| Application | Ultra high-speed switching |
| Application | Voltage clamping |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.70 |
| REACH | Compliant |
| Military Spec | False |
| Automotive Standard | AEC-Q101 qualified |
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