N-channel enhancement mode MOSFET, SOT-23 package, featuring 60V drain-source voltage and 0.3A continuous drain current. This surface-mount transistor offers a low drain-source on-resistance of 1600mOhm at 10V and a typical gate charge of 1.09nC at 4.5V. With a maximum power dissipation of 350mW, it operates across a temperature range of -55°C to 150°C.
PackageSOT-23
MountingSurface Mount
Quick Jump:
Technical Specifications
Nexperia 2N7002CK technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | SOT-23 |
| Package Description | Small Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 3(Max) |
| Package Width (mm) | 1.4(Max) |
| Package Height (mm) | 1(Max) |
| Seated Plane Height (mm) | 1.1(Max) |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-236AB |
| Configuration | Single |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | TMOS |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 0.3A |
| Maximum Drain Source Resistance | 1600@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 47.2@25VpF |
| Maximum Power Dissipation | 350mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | H2HX9 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Nexperia 2N7002CK Datasheet
Download the complete datasheet for Nexperia 2N7002CK to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.