N-channel enhancement mode MOSFET, SOT-23 package, 3-pin, surface mount. Features 60V drain-source voltage, 0.3A continuous drain current, and 1600mOhm maximum drain-source resistance at 10V. Operates from -55°C to 150°C with a maximum power dissipation of 350mW. Ideal for small signal applications.
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| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | SOT-23 |
| Package Description | Small Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 3(Max) |
| Package Width (mm) | 1.4(Max) |
| Package Height (mm) | 1(Max) |
| Seated Plane Height (mm) | 1.1(Max) |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-236AB |
| Configuration | Single |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | TMOS |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 0.3A |
| Maximum Drain Source Resistance | 1600@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 47.2@25VpF |
| Maximum Power Dissipation | 350mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | H2HX9 |
| EU RoHS | Yes |
| HTS Code | 8541210075 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
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